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Spin-Hall effect in a [110] GaAs quantum well.

E M Hankiewicz¹, G Vignale, M E Flatté

¹Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, USA.

Physical Review Letters

|February 7, 2007

Summary

This study presents a comprehensive model for the spin-Hall effect in [110] GaAs quantum wells. It details the spin-Hall conductivity, separating it into skew-scattering and side-jump contributions for experimental verification.

Area of Science:

Condensed Matter Physics
Spintronics
Semiconductor Nanostructures

Background:

The spin-Hall effect is crucial for spintronic devices, but requires a unified theoretical treatment of spin-orbit coupling and electron scattering.
Previous studies often treated these interactions separately, limiting accurate predictions for materials like [110] GaAs quantum wells.

Purpose of the Study:

To develop a self-consistent theoretical framework for the spin-Hall effect in [110] GaAs quantum wells.
To calculate the spin-Hall conductivity by incorporating Dresselhaus terms, electron-impurity, and electron-electron interactions.
To elucidate the contributions of skew-scattering and side-jump mechanisms to the spin-Hall conductivity.

Main Methods:

Employed the exact linear response formalism for a comprehensive theoretical treatment.

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Included Dresselhaus linear and cubic terms in the band structure calculations.

Accounted for electron-impurity scattering and electron-electron interactions to all orders.

Main Results:

Demonstrated that the spin-Hall conductivity naturally decomposes into skew-scattering and side-jump components.
Provided a detailed theoretical calculation for the spin-Hall conductivity in [110] GaAs quantum wells.

Conclusions:

The self-consistent treatment reveals distinct skew-scattering and side-jump contributions to the spin-Hall conductivity.
Proposed an experimental method to differentiate between these two contributions, enabling validation of the theoretical model.