Related Experiment Video
Updated: Jul 16, 2026
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Nitrogen-doped tungsten oxide nanowires: low-temperature synthesis on Si, and electrical, optical, and field-emission
Mu-Tung Chang1, Li-Jen Chou, Yu-Lun Chueh
1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
Abstract:
Very dense and uniformly distributed nitrogen-doped tungsten oxide (WO(3)) nanowires were synthesized successfully on a 4-inch Si(100) wafer at low temperature. The nanowires were of lengths extending up to 5 mum and diameters ranging from 25 to 35 nm. The highest aspect ratio was estimated to be about 200. An emission peak at 470 nm was found by photoluminescence measurement at room temperature. The suggested growth mechanism of the nanowires is vapor-solid growth, in which gaseous ammonia plays a significant role to reduce the formation temperature. The approach has proved to be a reliable way to produce nitrogen-doped WO(3) nanowires on Si in large quantities. The direct fabrication of WO(3)-based nanodevices on Si has been demonstrated.
