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Updated: Jul 16, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
High-frequency magneto-oscillations in GaAs/AlGaAs quantum wells
Y-W Tan1, H L Stormer, L N Pfeiffer
1Department of Physics, Columbia University, New York, New York 10027, USA.
Abstract:
We have observed very high-frequency, highly reproducible magneto-oscillations in modulation doped GaAs/AlGaAs quantum well structures. The oscillations are periodic in an inverse magnetic field (1/B) and their amplitude increases with temperature up to T approximately 700 mK. Being initially most pronounced around the filling factor nu=1/2, they move towards lower nu with increasing T. Front and back-gating data imply that these oscillations require a coupling to a parallel conducting layer. A comparison with existing oscillation models renders no explanation.
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