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Electric-field-effect modulation of the transition temperature, mobile carrier density, and in-plane penetration
D Matthey1, N Reyren, J-M Triscone
1DPMC, University of Geneva, 24 quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
Abstract:
We explore the relationship between the critical temperature T(c), the mobile areal carrier density n(2D), and the zero-temperature magnetic in-plane penetration depth lambda(ab)(0) in very thin underdoped NdBa(2)Cu(3)O(7-delta) films near the superconductor to insulator transition using the electric-field-effect technique. Having established consistency with a Kosterlitz-Thouless transition, we observe that T(KT) depends linearly on n(2D), the signature of a quantum superconductor to insulator transition in two dimensions with znu(over)=1, where z is the dynamic and nu is the critical exponent of the in-plane correlation length.
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