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Updated: Jul 16, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Experimental evidence of the vacancy-mediated silicon self-diffusion in single-crystalline silicon

Yasuo Shimizu1, Masashi Uematsu, Kohei M Itoh

  • 1Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan.

Physical Review Letters
|March 16, 2007
PubMed

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