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Updated: Jul 16, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Effects of a shell on the electronic properties of nanowire superlattices
1Département de Recherche Fondamentale sur la Matière Condensée, SP2M/L_Sim, CEA Grenoble, 38054 Grenoble Cedex 9, France.
Abstract:
We compute the structural and electronic properties of core-shell InAs/GaAs nanowire superlattices using Keating's valence force field and a sp3d5s* tight-binding model. We show that the GaAs shell limits strain relaxation but homogenizes the hydrostatic strain distribution in the InAs layers. This prevents the formation of a strain-induced well in the conduction band at the surface of the nanowires, which was shown to trap the electrons in thin InAs layers (Phys. Rev. B 2006, 74, 155304). The shell, however, enhances the piezoelectric field, which increases the separation between the electrons and holes in thick InAs layers. These results emphasize the intricate links between the structural and electronic properties of strained nanowire heterostructures.
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