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Updated: Jul 16, 2026
07:46
Data Acquisition Protocol for Determining Embedded Sensitivity Functions
Published on: April 20, 2016
Sensitivity and dynamic range of FGMOS dosemeters
P J McNulty1, Kelvin F Poole, M Crissler
1Clemson University, Clemson, SC 29634-0978, USA. mpeter@clemson.edu
Radiation Protection Dosimetry
|March 28, 2007
Summary
Floating-gate MOSFET (FGMOS) memory devices are effective radiation dosemeters. These UVPROM devices require no power during exposure, making them suitable for remote, high-radiation environments.
Area of Science:
- Solid-state physics
- Radiation detection and measurement
Background:
- Floating-gate MOSFET (FGMOS) transistors are utilized in UVPROM (ultraviolet-erasable programmable read-only memory) devices.
- These FGMOS-based memory cells exhibit properties suitable for radiation dosimetry.
Purpose of the Study:
- To evaluate the suitability of UVPROM memory devices employing FGMOS transistors as dosemeters for ionizing radiation.
- To explore their application in remote-sensing scenarios within high-radiation environments.
Main Methods:
- Utilizing UVPROM memory devices with FGMOS transistors as the core memory cell structure.
- Implementing proper preparation and programming techniques for the FGMOS devices.
Main Results:
- UVPROM devices with FGMOS transistors demonstrate excellent performance as dosemeters.
- These devices function effectively without requiring external power during the radiation exposure period.
Conclusions:
- FGMOS-based UVPROM memory devices are highly effective and practical dosemeters.
- Their power-free operation during exposure enables reliable remote sensing in high-radiation settings.
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