Related Experiment Video
Updated: Jul 16, 2026

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
Published on: June 23, 2017
Molecular electrodes at the exposed edge of metal/insulator/metal trilayer structures
Pawan Tyagi1, Dongfeng Li, Stephen M Holmes
1Department of Chemical and Materials Engineering and Center for Nanoscale Science and Engineering, University of Kentucky, Lexington, Kentucky 40506-0046, USA.
Abstract:
Producing reliable electrical contacts of molecular dimensions has been a critical challenge in the field of molecule-based electronics. Conventional thin film deposition and photolithography techniques have been utilized to construct novel nanometer-sized electrodes on the exposed vertical plane on the edge of a thin film multilayer structure (metal/insulator/metal). Via thiol surface attachment to metal leads, an array of paramagnetic, cyanide-bridged octametal complexes, [(pzTp)FeIII(CN)3]4[NiII(L)]4[O3SCF3]4 (1) [(pzTp) = tetra(pyrazol-1-yl)borate; L = 1-S(acetyl)tris(pyrazolyl)decane], were covalently linked onto the electrodes forming a dominant conduction pathway. A series of molecule-based devices were fabricated using Ni, NiFe, Ta, and Au as metal electrodes separated by insulating Al2O3 spacers, followed by treatment with 1. A series of control experiments were also performed to demonstrate that the conduction path was through tethered metal clusters. The molecular current was analyzed via the Simmons tunnel model, and calculations are consistent with electron tunneling through the alkane ethers to the central metal core. With a Ni/Al2O3/Au molecular electrode, the tether binding was found to be reversible to the top Au layer, allowing for a new class of chemical detection based on the steric bulk of coordinating analytes to disconnect the molecular current path. Simple and economical photolithography/liftoff/self-assembly fabrication techniques afford robust molecular junctions with high reproducibility (>90%) and long operational lifetimes (>1 year).
More Related Videos
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
The Electrical Double Layer
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Types of Reversible Electrodes
Potentiometry: Membrane Electrodes

