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Updated: Jul 16, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Field emission studies of pulsed laser deposited LaB6 films on W and Re
Dattatray J Late1, Mahendra A More, Pankaj Misra
1DST Unit on Nanoscience and Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007, India.
Abstract:
Lanthanum hexaboride films were grown on tungsten and rhenium tips and foils by pulsed laser deposition. The X-ray diffraction spectra of the PLD LaB6 films on both the substrates show crystalline nature with average grain size approximately 125 nm. The field emission studies of pointed and foil specimens were performed in conventional and planar diode configurations, respectively, under ultra-high vacuum condition. An estimated current density of approximately 1.2 x 10(4) A/cm2 was drawn at the electric field of 3 x 10(3) and 6 x 10(3) V/microm from the LaB6 coated tips of tungsten and rhenium, respectively. The Fowler-Nordheim plots were found to be linear showing metallic behavior of the emitters. The field enhancement factors were calculated from the slopes of the Fowler-Nordheim plots, indicating that the field emission is from LaB6 nanoscale protrusions present on emitter surfaces. The emitters were operated for long time current stability (3 h) studies. The post-field emission surface morphology of the emitters showed no significant erosion of LaB6 films during 3 h continuous operation. The observed behavior indicates that it is linked with the growth of LaB6 films on W and Re. These results reveal that the LaB6 films exhibit high resistance to ion bombardment and excellent structural stability and are more promising emitters for practical applications in field emission based devices.

