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[Heat stress characteristics of photosystem II in eggplant]
Mei Wang1, Zhi-kui Gao, Rui-hong Huang
1College of Horticulture, Hebei Agricultural University, Baoding 071001, Hebei, China. wang_mei369@163.com
Abstract:
With lower-and higher heat-resistant varieties of eggplant (Solanum melongena L.) Heibei I and Heibei II as test materials, and by using Plant Efficiency Analyzer (PEA) from Hansatech, this paper measured the fast chlorophyll a fluorescence transient and its parameters. The results showed that PS II construction became more sensitive to heat stress when ambient temperature was higher than 40 degrees C. The F0 went up slowly, and Fv/Fm and deltaF/Fm' came down dramatically. Heibei II had a longer semi-attenuation temperature of Fv/Fm (T50) and deltaF/Fm' (t50) than Heibei I. Under strong heat stress (5 min at 48 degrees C or 20-30 min at 44 degrees C), the K-step in relation to the inactivation of oxygen-evolving complex appeared in fluorescence rise at about 700 micros, and the regular O-J-I-P transient was transformed to O-K-J-I-P one. The K-phase of Heibei I and Heibei II appeared when the treatment time was up to 20 and 30 minutes at 44 degrees C, respectively. In comparing with 35 degrees C heat treatment, the DI0/RC in the parameters of Strasser's specific energy fluxes model was increased by a great extent under 48 degrees C or more heat stress, reflecting a strong safeguard of energy dissipation to PS II. When the temperature of heat stress increased from 35 degrees C to 52 degrees C, the Fvi/Fv of PS II silent reaction centers of Heibei I and Heibei II increased remarkably.
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