Related Experiment Video

Updated: Jul 15, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics

M Kittler1, X Yu, T Mchedlidze

  • 1IHP, Im Technologiepark 25, 15236 Frankfurt, Germany.

Small (Weinheim an Der Bergstrasse, Germany)
|April 13, 2007
PubMed

More Related Videos

Novel 3D/VR Interactive Environment for MD Simulations, Visualization and Analysis11:29

Novel 3D/VR Interactive Environment for MD Simulations, Visualization and Analysis

Published on: December 18, 2014

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling08:58

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling

Published on: January 28, 2021

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...