Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Characteristics of JFET01:21

Characteristics of JFET

Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

In vivo clonotypic regulation of human myelin basic protein-reactive T cells by T cell vaccination.

Journal of immunology (Baltimore, Md. : 1950)·1995
Same author

Superantigen reactivity of gamma delta T cell clones isolated from patients with multiple sclerosis and controls.

Cellular immunology·1995
Same author

Tissue distribution of cocaine methyl esterase and ethyl transferase activities: correlation with carboxylesterase protein.

The Journal of pharmacology and experimental therapeutics·1995
Same author

Suppression of insulitis in non-obese diabetic (NOD) mice by oral insulin administration is associated with selective expression of interleukin-4 and -10, transforming growth factor-beta, and prostaglandin-E.

The American journal of pathology·1995
Same author

Molecular cloning and characterization of NF-IL3A, a transcriptional activator of the human interleukin-3 promoter.

Molecular and cellular biology·1995
Same author

A potential vulnerability locus for schizophrenia on chromosome 6p24-22: evidence for genetic heterogeneity.

Nature genetics·1995

Related Experiment Video

Updated: Jul 15, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

A comparative study on SWCNT and DWCNT field-effect transistors.

X L Liang1, S Wang, X J Duan

  • 1Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China.

Journal of Nanoscience and Nanotechnology
|April 25, 2007
PubMed
Summary

Field-effect transistors made from semiconducting single-walled carbon nanotubes (SWCNTs) and double-walled carbon nanotubes (DWCNTs) were compared. Semiconducting-metallic DWCNTs showed unique electrical properties due to intershell interactions.

More Related Videos

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Related Experiment Videos

Last Updated: Jul 15, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Field-effect transistors (FETs) are crucial electronic components.
  • Carbon nanotubes (CNTs) offer unique electrical properties for next-generation electronics.
  • Understanding the behavior of single-walled (SWCNTs) versus double-walled (DWCNTs) is key to device optimization.

Purpose of the Study:

  • To comparatively study the electrical transport properties of FETs fabricated with SWCNTs and DWCNTs.
  • To investigate the influence of different shell configurations (semiconducting/metallic) in DWCNTs on their field-effect characteristics.
  • To elucidate the role of intershell interactions in S-M DWCNT devices.

Main Methods:

  • Fabrication of field-effect transistors using SWCNTs and DWCNTs.
  • Comparative electrical transport measurements under gate modulation.
  • Analysis of device characteristics based on DWCNT shell types (S-S, S-M, M-S, M-M).

Main Results:

  • Semiconducting SWCNTs exhibit superior field-effect characteristics compared to some DWCNT counterparts.
  • DWCNTs display complex responses to gate modulation, dependent on shell composition.
  • S-M DWCNT devices show distinct field-effect behavior, attributed to intershell interactions and metallic shell screening.
  • S-S and M-M/M-S DWCNT devices exhibit characteristics similar to SWCNT devices.

Conclusions:

  • S-M DWCNT devices serve as an ideal platform for studying intershell interactions in multi-walled carbon nanotubes.
  • Comparative analysis of S-M DWCNT and S-SWCNT devices provides insights into how intershell interactions affect electrical properties.
  • The findings are crucial for designing advanced CNT-based electronic devices.