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Updated: Jul 15, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Dae-Hwang Kim1, Florian Merget, Michael Först
1Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeld Strasse 24, D-52074 Aachen, Germany.
This study compares phase change random access memory (PCRAM) cell designs for efficient RESET operations. Confined and lateral PCRAM architectures offer superior thermal management and reduced current requirements compared to vertical designs.
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