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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals.

P H Yeh¹, L J Chen, P T Liu

¹Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.

Journal of Nanoscience and Nanotechnology

|April 26, 2007

Summary

This study demonstrates novel metal-oxide-semiconductor memory devices using nickel disilicide (NiSi2) and cobalt disilicide (CoSi2) nanocrystals. These structures exhibit significant capacitance-voltage hysteresis, enabling low-voltage operation and improved data retention with hafnium dioxide control layers.

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Development of non-volatile memory technologies is crucial for modern electronics.
Metal silicide nanocrystals offer potential for high-density memory applications.
Challenges remain in achieving stable and efficient memory characteristics.

Purpose of the Study:

To fabricate and characterize metal-oxide-semiconductor (MOS) memory devices incorporating NiSi2 and CoSi2 nanocrystals.
To investigate the memory properties, including hysteresis and retention, of these novel structures.
To assess the compatibility of the fabrication process with existing semiconductor manufacturing.

Main Methods:

Fabrication of MOS structures with NiSi2 and CoSi2 nanocrystals embedded in a silicon dioxide (SiO2) layer.
Electrical characterization using capacitance-voltage (C-V) measurements to observe hysteresis.
Evaluation of data retention characteristics.
Integration of a hafnium dioxide (HfO2) layer as a control oxide.

Main Results:

A pronounced capacitance-voltage hysteresis was observed, indicating memory functionality.
A significant memory window of approximately 1 V was achieved under low programming voltages.
The use of a HfO2 control oxide layer demonstrably improved the retention characteristics.
The fabrication process was confirmed to be compatible with current semiconductor industry manufacturing standards.

Conclusions:

NiSi2 and CoSi2 nanocrystals are effective charge storage elements in MOS memory devices.
The developed memory structures exhibit promising performance for non-volatile memory applications.
The integration of HfO2 enhances device reliability, paving the way for practical implementation.