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Updated: Jul 15, 2026

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
Published on: September 23, 2018
Atomic structure of graphene on SiO2.
Masa Ishigami1, J H Chen, W G Cullen
1Materials Research Science and Engineering Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA.
We used scanning probe microscopy to observe atomic structures in graphene electronic devices. A novel cleaning process revealed substrate-induced lattice distortions, offering new insights into graphene device fabrication.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene's unique electronic properties make it promising for next-generation electronics.
- Understanding graphene's atomic structure and morphology is crucial for device performance.
- Conventional fabrication methods can obscure critical nanoscale details.
Purpose of the Study:
- To visualize the atomic structure and nanoscale morphology of graphene-based electronic devices.
- To investigate the influence of the underlying substrate on graphene's lattice structure.
- To establish a method for preparing atomically clean graphene for high-resolution imaging.
Main Methods:
- Employing scanning probe microscopy (SPM) techniques.
- Utilizing atomic resolution scanning tunneling microscopy (STM).
- Developing and applying a novel cleaning process for graphene sheets.
Main Results:
- Revealed strong, spatially dependent perturbations in the graphene lattice.
- Observed that the hexagonal lattice symmetry of graphene is broken.
- Demonstrated that graphene's structural corrugations conform to the silicon dioxide substrate.
- Showcased how standard lithography obscures these nanoscale effects due to photoresist residue.
Conclusions:
- Atomically clean graphene surfaces are essential for observing substrate-induced effects.
- The substrate significantly influences graphene's atomic structure and morphology.
- These findings provide critical insights for the fabrication of high-performance graphene devices.
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