Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure
G Pettinari1, A Polimeni, F Masia
1CNISM and Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy.
Physical Review Letters
|May 16, 2007
Summary
Electron mass in nitrogen-diluted GaAs1-xNx shows significant pressure-induced changes due to nitrogen states. These findings reveal how nitrogen complexes affect electronic properties in gallium arsenide.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Semiconductor Physics
Background:
- Gallium arsenide (GaAs) is a crucial semiconductor material.
- Nitrogen (N) incorporation in GaAs can alter its electronic properties.
- Understanding these alterations is key for novel electronic devices.
Purpose of the Study:
- To investigate the effect of hydrostatic pressure on electron mass in N-diluted GaAs.
- To elucidate the role of nitrogen-related states in modulating electronic properties.
- To explore the pressure-induced hybridization between conduction band states and nitrogen levels.
Main Methods:
- Magnetophotoluminescence spectroscopy was employed.
- Hydrostatic pressure was applied to GaAs1-xNx samples (x=0.10% and 0.21%).
- Electron mass dependence on pressure was analyzed.
Main Results:
- Observed exceptionally large fluctuations in electron mass (up to 60%/kbar) with increasing pressure.
- Identified pressure-driven tuning of hybridization between conduction band minimum and nitrogen-related states.
- Demonstrated significant impact of nitrogen complexes on GaAs electronic properties.
Conclusions:
- The study reveals a strong dependence of electron mass on hydrostatic pressure in N-diluted GaAs.
- Nitrogen complexes play a critical role in perturbing the electronic landscape of GaAs.
- A hierarchy of nitrogen complexes influencing electronic properties is suggested.
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