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Carrier transport in two-dimensional graphene layers.

E H Hwang1, S Adam, S Das Sarma

  • 1Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA.

Physical Review Letters
|May 16, 2007
PubMed
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This study explains carrier transport in graphene, detailing how charged impurities affect conductivity. It resolves experimental discrepancies in electron and hole conductivity, and conductivity saturation at high and low densities.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Graphene's unique electronic properties are sensitive to scattering from charged impurities.
  • Understanding carrier transport is crucial for graphene-based electronic devices.

Purpose of the Study:

  • To theoretically model carrier transport in gated 2D graphene monolayers considering charged impurity scattering.
  • To explain experimental observations of conductivity asymmetry and saturation.

Main Methods:

  • Theoretical analysis of carrier transport in graphene.
  • Modeling scattering by random charged impurity centers.
  • Comparison with existing experimental data for carrier densities above 10^12 cm^-2.

Main Results:

Related Experiment Videos

  • Conductivity scales linearly with the ratio of carrier density to impurity density (n/n(i)).
  • The theory explains the observed asymmetry between electron and hole conductivities.
  • High-density conductivity saturation in high-mobility samples is explained.
  • Low-density conductivity saturation is attributed to impurity-induced carrier density inhomogeneity.

Conclusions:

  • Charged impurity scattering is a dominant factor in graphene carrier transport.
  • The developed theory provides quantitative agreement with experimental data.
  • Inhomogeneity due to charged impurities significantly impacts graphene conductivity, especially at lower densities.