Related Experiment Video
Updated: Jul 14, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Formation and rupture of Schottky nanocontacts on ZnO nanocolumns
Beatriz Pérez-García1, Jesús Zúñiga-Pérez, Vicente Muñoz-Sanjosé
1Dep. Física, Edificio CIOyN (Campus Espinardo), Universidad de Murcia, E-30100 Murcia, Spain.
Abstract:
In this paper, the electrical transport and mechanical properties of Pt/ZnO Schottky nanocontacts have been studied simultaneously during the formation and rupture of the nanocontacts. By combining multidimensional conducting scanning force spectroscopy with appropriated data processing, the physical relevant parameters (the ideality factor, the Schottky barrier height, and the rupture voltage) are obtained. It has been found that the transport curves strongly depend on the loading force. For loading forces higher than a threshold value, the transport characteristics are similar to those of large-area Schottky contact, while below this threshold deviations from strictly thermionic emission are detected. Above the threshold, stable and reproducible Pt/ZnO nanocontacts with ideality factors of about 2 and Schottky barrier heights of around 0.45 eV have been obtained.
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barrier Diode

