ClnH6-nSiGe compounds for CMOS compatible semiconductor applications: synthesis and fundamental studies

Area of Science:

• Materials Science
• Inorganic Chemistry
• Chemical Engineering

Background:

• Silicon-germanium (Si-Ge) compounds are crucial for advanced semiconductor devices.
• Controlled synthesis of Si-Ge precursors is essential for enabling novel material properties and device functionalities.

Purpose of the Study:

• To synthesize and characterize a new family of chlorinated Si-Ge hydrides (ClnH6-nSiGe).
• To explore their potential as precursors for semiconductor applications, particularly for CMOS processing.
• To investigate the structural, thermochemical, and vibrational properties of these novel compounds.

Main Methods:

• Selective chlorination of H3SiGeH3 using BCl3 to produce mono- and di-chlorinated derivatives.
• Synthesis of higher order polychlorinated Si-Ge compounds.
• Characterization using NMR, FTIR, and mass spectroscopy.
• First principles density functional theory calculations for structural and thermochemical analysis.
• Low-temperature deposition of SiGe films from synthesized precursors.

Main Results:

• Successful synthesis of a new family of chlorinated Si-Ge hydrides, ClnH6-nSiGe.
• Demonstrated viability of a single-step synthesis route for semiconductor applications.
• Production of novel polychlorinated Si-Ge compounds with high reactivity.
• Characterization and theoretical elucidation of structural and electronic trends.
• Deposition of near-stoichiometric SiGe films with desirable microstructural and surface properties.

Conclusions:

• The synthesized chlorinated Si-Ge hydrides offer a versatile platform for creating advanced SiGe materials.
• The built-in chlorine functionalities facilitate selective growth compatible with CMOS processing.
• These compounds represent a significant advancement in the field of precursors for semiconductor manufacturing.