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Interfacial titanium oxide between hydroxyapatite and TiAlFe substrate.

Valentin Nelea1, Constantin Morosanu, Mircea Bercu

  • 1National Institute for Lasers, Plasma, and Radiation Physics, PO Box MG-54, Bucharest 77125, Romania.

Journal of Materials Science. Materials in Medicine
|June 15, 2007
PubMed
Summary
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This study investigated hydroxyapatite (HA) thin films on titanium alloy, revealing that titanium oxide interfacial layers form during annealing. Inserting a titanium nitride (TiN) buffer layer effectively inhibited this oxide formation, impacting film properties.

Area of Science:

  • Biomaterials science
  • Materials science
  • Surface science

Background:

  • Hydroxyapatite (HA) coatings are crucial for biomedical implants.
  • Titanium alloys are common implant substrates.
  • Understanding the HA-titanium interface is vital for implant osseointegration and longevity.

Purpose of the Study:

  • To characterize the interface between nano-crystalline HA thin films and Ti5Al2.5Fe alloy.
  • To investigate the effect of deposition conditions and post-treatments on interface development.
  • To evaluate the influence of an interfacial titanium oxide layer on HA film properties.

Main Methods:

  • Radio-frequency magnetron sputtering for HA thin film deposition.
  • Grazing incidence X-ray diffraction and Fourier transform infrared spectrophotometry for structural analysis.

Related Experiment Videos

  • Nanoindentation for mechanical property assessment.

    • Main Results:

    • Annealing in humid air promoted TiO(2) growth at the HA/Ti alloy interface.
    • Direct sputtering at high temperatures led to TiO(2) diffusion into HA films.
    • A crystalline TiN buffer interlayer successfully inhibited interfacial TiO(2) formation.
    • Mechanical properties of HA films were affected by interfacial layer development.

    Conclusions:

    • The formation of interfacial titanium oxide layers can be controlled by deposition and annealing parameters.
    • TiN buffer interlayers offer a strategy to prevent detrimental interfacial reactions.
    • Controlling the HA/Ti interface is essential for optimizing the performance of biomedical implants.