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Related Experiment Videos

Orientation-controlled self-assembled nanolithography using a polystyrene-polydimethylsiloxane block copolymer.

Yeon Sik Jung1, C A Ross

  • 1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.

Nano Letters
|June 16, 2007
PubMed
Summary
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Templated self-assembly of poly(styrene-b-dimethylsiloxane) block copolymers enables precise nanolithography. This method achieves long-range ordering and creates robust etch masks for pattern transfer.

Area of Science:

  • Materials Science
  • Polymer Science
  • Nanolithography

Background:

  • Block copolymers self-assemble into ordered nanostructures.
  • Poly(styrene-b-dimethylsiloxane) (PS-PDMS) diblock copolymers offer tunable morphologies.
  • Nanolithography requires precise control over feature size and placement.

Purpose of the Study:

  • Investigate templated self-assembly of PS-PDMS for nanolithography.
  • Optimize ordering and defect reduction using substrate surface treatments.
  • Demonstrate pattern transfer capabilities for fabricating nanoscale features.

Main Methods:

  • Utilized templated self-assembly of PS-PDMS diblock copolymer.
  • Employed a PDMS-brush substrate surface treatment to enhance ordering.

Related Experiment Videos

  • Adjusted mesa width, solvent-annealing vapor pressure, and time for cylinder orientation control.
  • Performed two-step reactive ion etching to create an oxide etch mask.

    • Main Results:

    • Achieved long-range ordering and minimized defect densities in PS-PDMS nanostructures.
    • Successfully oriented self-assembled cylinders parallel or perpendicular to trench walls.
    • Demonstrated pattern transfer into thin silica using the PDMS etch mask.
    • High silicon content in PDMS provided a robust oxide etch mask.

    Conclusions:

    • PS-PDMS block copolymer system is well-suited for self-assembled nanolithography.
    • Templated self-assembly offers precise control over nanostructure formation and orientation.
    • The robust etch mask enables effective pattern transfer for device fabrication.