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Updated: Jul 14, 2026

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
Published on: October 6, 2020
Optical and physical properties of solgel-derived GeO2:SiO2 films in photonic applications
Charles K F Ho1, Rajni Pal, H S Djie
1Photonics Research Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798.
Abstract:
The functionality of optical components relies heavily on the composition-dependent properties of germanosilicate materials, which include the refractive index, photosensitivity, and microstructural properties. Recent studies and parallel developments are presented of germanosilicate films with composition x of Ge content (i.e., xGeO(2):(1-x)SiO(2)) that were synthesized by the solgel process for various integrated photonic applications undertaken. The following novel aspects are discussed with respect to the effect of composition of the glassy films (0.05=x=0.40): determination of spectral optical properties, UV imprinting of optical waveguides with relatively large index change (Dn), and quantum-well intermixing enhancement observed in InGaAs(P)/InP quantum-well optical devices. The implications of the results are discussed.

