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Updated: Jul 14, 2026

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
Published on: May 11, 2019
Ultralow-dielectric-constant optical thin films built from magnesium oxyfluoride vesicle-like hollow nanoparticles
David Grosso1, Cédric Boissière, Clément Sanchez
1Chimie de la Matière Condensée de Paris, UMR UPMC-CNRS 7574, Université Pierre et Marie Curie (paris 6), 4 place Jussieu, Tour 54-5E, 75252 Paris 05, France.
Abstract:
Academic and industrial research groups are currently working to obtain high-quality transparent ultralow-refractive-index and ultralow-dielectric-constant thin films, as they are important for designing smart devices and systems for microoptics and microelectronics (for example, multilayer structures, optical resonators, photonic crystals, Cu interconnects, insulating layers and so on). Here, we report a robust and simple procedure to prepare highly porous and resistant semicrystalline magnesium oxyfluoride thin films through liquid deposition followed by a flash and short thermal treatment. These films are water insensitive, mechanically resistant (E=1 GPa), exhibit high optical quality and have an ultralow refractive index (n(700 nm) = 1.09) and an ultralow dielectric constant (k(100 kHz) = 1.6) which are required for the above-mentioned applications. Moreover, the process used to prepare these nanomaterials is well suited for industrial production on larger surfaces.

