Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

Imaging Si nanoparticles embedded in SiO(2) layers by (S)TEM-EELS.

S Schamm1, C Bonafos, H Coffin

  • 1nMat Group, CEMES-CNRS, 31055 Toulouse, France. schamm@cemes.fr

Ultramicroscopy
|July 10, 2007
PubMed
Summary
This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Charge State Tuning of Spin Defects in Hexagonal Boron Nitride.

Nano letters·2025
Same author

Shaping single crystalline BaTiO<sub>3</sub>nanostructures by focused neon or helium ion milling.

Nanotechnology·2024
Same author

Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride.

Physical review letters·2023
Same author

Corrigendum to 'Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice' Ultramicroscopy 253 (2023) 113778>.

Ultramicroscopy·2023
Same author

Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice.

Ultramicroscopy·2023
Same author

Stimulated electron energy loss and gain in an electron microscope without a pulsed electron gun.

Ultramicroscopy·2019

Electron energy-loss spectroscopy (EELS) is the best method for visualizing silicon nanoparticles in silica films. This technique accurately measures nanoparticle size and density, crucial for optimizing memory and opto-electronics devices.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Physics

Background:

  • Silicon nanoparticles embedded in silica are vital for non-volatile memory and opto-electronics.
  • Precise control over nanoparticle parameters (position, size, density) is essential for device optimization.
  • Transmission electron microscopy (TEM) offers methods for characterizing these nanoparticles.

Purpose of the Study:

  • To review and emphasize Transmission Electron Microscopy (TEM) methods for measuring silicon nanoparticle parameters.
  • To highlight Electron Energy-Loss Spectroscopy (EELS) as the optimal technique for nanoparticle characterization.
  • To compare direct (EFTEM) and indirect (STEM-PEELS) EELS imaging methods.

Main Methods:

  • Review of TEM techniques, focusing on EELS.

Related Experiment Videos

  • Utilizing EELS in the low-energy-loss domain for Si plasmon peak visualization.
  • Comparing EFTEM (direct imaging) and STEM-PEELS (spectrum-imaging data).
  • Main Results:

    • EELS imaging is the only method to visualize all Si nanoparticles and accurately measure size and density.
    • Both EFTEM and STEM-PEELS provide equivalent results for nanoparticle characterization.
    • Image processing and numerical filters enhance contrast for morphometric analysis.

    Conclusions:

    • EELS, particularly EFTEM and STEM-PEELS, is superior for characterizing Si nanoparticles in silica films.
    • Accurate nanoparticle metrology is key to advancing memory and opto-electronics applications.
    • Understanding irradiation damage is also important for these systems.