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Scanning photoinduced impedance microscopy using amorphous silicon photodiode structures.

Yinglin Zhou¹, Li Chen, Steffi Krause

¹Department of Materials, Queen Mary University of London, London, E1 4NS, UK.

Analytical Chemistry

|July 14, 2007

Summary

Scanning photoinduced impedance microscopy (SPIM) now uses amorphous silicon photodiodes for improved photocurrents. This advancement enhances resolution in impedance imaging of materials, overcoming previous limitations.

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Area of Science:

Materials Science
Electrical Engineering
Semiconductor Physics

Background:

Scanning photoinduced impedance microscopy (SPIM) is an impedance imaging technique relying on photocurrent measurements.
Current SPIM methods use electrolyte-insulator-semiconductor (EIS) and metal-insulator-semiconductor (MIS) structures, limiting resolution by charge carrier diffusion.
Amorphous silicon (a-Si) offers short diffusion lengths but faces challenges like interface states and leakage currents in traditional field-effect capacitors.

Purpose of the Study:

To adapt SPIM for use with amorphous hydrogenated silicon (a-Si:H) to improve resolution.
To investigate amorphous silicon photodiode structures (a-Si:H p-i-n/SiO2 or n-i-p/SiO2) as an alternative to field-effect capacitors for SPIM.
To understand the factors influencing photocurrent measurement resolution in these new structures.

Main Methods:

Fabrication of amorphous hydrogenated silicon photodiode structures (a-Si:H p-i-n/SiO2 or n-i-p/SiO2).
Utilized these photodiode structures for SPIM measurements.
Developed an equivalent circuit model to simulate observed behaviors.

Main Results:

Amorphous silicon photodiode structures proved suitable for SPIM measurements, yielding higher photocurrents.
The necessity of a high-quality insulator was eliminated.
Photocurrent measurement resolution was found to be highly dependent on modulated light frequency and doping concentration near the insulator.

Conclusions:

Amorphous silicon photodiode structures are a viable alternative for SPIM, overcoming limitations of traditional field-effect capacitors.
This approach enhances SPIM's applicability for materials with short charge carrier diffusion lengths.
The developed equivalent circuit model accurately simulates the factors affecting resolution in a-Si:H photodiode-based SPIM.