New scintillation detector of backscattered electrons for the low voltage SEM
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Updated: Jul 13, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
1Institute of Scientific Instruments AS CR, Královopolská 147, 612 64 Brno, Czech Republic. wandrol@isibrno.cz
Abstract:
The new scintillation detector of backscattered electrons that is capable of working at primary beam energy as low as 0.5 keV is introduced. Low energy backscattered electrons are accelerated in order to generate a sufficient number of photons. Secondary electrons are deflected back by the energy filter so that the true compositional contrast of the specimen is obtained. The theoretical models of the detector function are described and first demonstration images are presented.
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