Effect of variable pressure on growth and photoluminescence of ZnO nanostructures

Thin films constituted of equiaxed and one dimensional nanostructures of ZnO via metal-catalyst-free vapor phase were grown using a simplistic thermal evaporation technique under two different pressure conditions approximately of the order of 10(-1) and 10(-3) torr, respectively. ZnO deposited at low vacuum (approximately 10(-1) torr) exhibited the formation of nanograins of variable size between 60 to 180 nm. In contrast the film grown at high vacuum (approximately 10(-3) torr) resulted the nanowired type morphology with a random networking, generally distributed with equiaxed grains of film microstructure. The diameter of maximum number of these nanowires lies between 45 to 65 nm. The films grown at low vacuum has shown almost equal composition of Zn and O while the film grown at high vacuum has shown lower content of O. The nanowires formed under limited O (high vacuum: approximately 10(-3) torr) signifies the role of O vacancies during growth. It has been postulated that presumably under high vacuum deposition, initially formed ZnO transforms to ZnOx (x < 1) through creation of O vacancies due to limited presence of O. Subsequently ZnOx acts as self-catalyst and heterogeneous nuclei are responsible for the formation of nanowired type morphology. The effect of different microstructures has been correlated and discussed to understand the photoluminescence characteristics obtained on these films.