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Nanocrystalline SnO2 formation using energetic ion beam.

T Mohanty1, Y Batra, A Tripathi

  • 1School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067, India.

Journal of Nanoscience and Nanotechnology
|July 28, 2007
PubMed
Summary

Ion bombardment of nanocrystalline tin oxide (SnO2) thin films alters grain size and optical properties. Radiation exposure can cause grain growth or reduction, depending on the substrate, and introduces defects.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Nanocrystalline tin oxide (SnO2) thin films are synthesized using RF magnetron sputtering.
  • Characterization techniques include UV-Visible absorption and photoluminescence spectroscopy.
  • Atomic force microscopy (AFM) and glancing angle X-ray diffraction (GAXRD) reveal initial grain radius of 6+/-2 nm.

Purpose of the Study:

  • Investigate the stability of SnO2 nanophases under ion bombardment.
  • Analyze the effects of 250 keV Xe2+ ion beam irradiation on film properties.
  • Understand the influence of the substrate matrix on ion beam-induced modifications.

Main Methods:

  • RF magnetron sputtering for SnO2 thin film deposition.
  • UV-Visible absorption and photoluminescence spectroscopy for optical characterization.

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  • AFM and GAXRD for microstructural analysis before and after ion bombardment.
  • 250 keV Xe2+ ion beam irradiation to induce radiation effects.
  • Main Results:

    • Ion bombardment shifted the optical absorption band edge to the red region.
    • AFM showed an increase in grain radius to approximately 8+/-1 nm with improved uniformity.
    • Grain size reduction was observed for films grown on Si substrates.
    • Defects like vacancies and voids were generated in films and substrates.
    • Ion bombardment induced local heating, potentially causing film melting and enhanced atomic diffusion.

    Conclusions:

    • SnO2 nanophases exhibit radiation-induced modifications in grain size and optical properties.
    • Substrate material plays a crucial role in determining the outcome of ion beam-induced grain growth.
    • Defect generation and enhanced diffusion contribute to observed microstructural changes.
    • The study provides insights into the radiation stability of nanocrystalline SnO2 films.