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[Multispectral color sensor based on vertically stacked structure].

Yuan Chen1, Zhi-hai Xu, Hua-jun Feng

  • 1State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China. leohart@126.com

Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu
|July 28, 2007
PubMed
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This study introduces a novel vertically stacked multispectral color sensor. It offers anti-aliasing, high resolution, and eliminates color interpolation for advanced imaging applications.

Area of Science:

  • Optoelectronics
  • Materials Science
  • Photonics

Context:

  • Traditional color sensors often suffer from color aliasing and require complex interpolation algorithms.
  • Existing sensor designs face limitations in spatial resolution and optical performance.
  • The need for efficient and high-fidelity multispectral imaging drives innovation in sensor technology.

Purpose:

  • To introduce a novel vertically stacked multispectral color sensor.
  • To analyze the spectral mechanisms and output performance of different pixel structures.
  • To explore the potential of silicon and amorphous silicon-based technologies for advanced color sensing.

Summary:

  • A novel multispectral color sensor utilizing a vertically stacked structure is presented.

Related Experiment Videos

  • The sensor leverages silicon's wavelength-dependent light penetration depth for color separation.
  • Two pixel structures, buried pn junctions and stacked amorphous silicon, are investigated for their performance.
  • The sensor design eliminates color interpolation and low-pass filtering, offering anti-aliasing and high spatial resolution.

    • Impact:

    • This sensor technology has the potential to significantly improve image quality in various applications.
    • It offers a more efficient and flexible approach to multispectral color sensing.
    • The research paves the way for next-generation imaging devices with enhanced color fidelity and resolution.