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Updated: Jul 13, 2026

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Quantitative structure-property relationship in a combinatorial Bi4-xLaxTi3O12 (0<or=x<or=1) thin film array obtained
Ki Woong Kim1, Min Ku Jeon, Tai Suk Kim
1Department of Chemical and Biomolecular Engineering (BK21 Graduate Program) and Center for Ultramicrochemical Process Systems (CUPS), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
Abstract:
A ferroelectric Bi4-xLaxTi3O12 (BLT) thin film library was fabricated from Bi2O3/La2O3/TiO2 multilayers using a multitarget RF-sputtering system equipped with an automated shutter. The polarization-electric field and structure were mapped as a function of the La content from x=0 to 1. Remnant polarization (Pr) increased as the La content decreased, and it reached a maximum 2Pr of 20 microC/cm2 at x=0.28. At x<0.28, 2Pr decreased gradually as the La content decreased. This compositional dependence of the remanent polarization was the result of the degree of TiO6 tilting along the a-b plane changing as a function of the La content. This was quantitatively related to the intensity ratio between the (117) peak and the (008) peak in the X-ray diffraction (XRD) pattern and to the intensity of the Raman band at 848 cm-1, arising from stretching mode of TiO6 octahedrons.
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