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Updated: Jul 13, 2026

Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
Published on: June 9, 2023
Electron leakage and double-exchange ferromagnetism at the interface between a metal and an antiferromagnetic
B R K Nanda1, S Satpathy, M S Springborg
1Department of Physics, University of Missouri, Columbia, Missouri 65211, USA.
Abstract:
Density-functional electronic structure studies of a prototype interface between a paramagnetic metal and an antiferromagnetic (AFM) insulator (CaRuO(3)/CaMnO(3)) reveal the exponential leakage of the metallic electrons into the insulator side. The leaked electrons in turn control the magnetism at the interface via the ferromagnetic (FM) Anderson-Hasegawa double exchange, which competes with the AFM superexchange of the bulk CaMnO3. The competition produces a FM interfacial CaMnO3 layer (possibly canted); but beyond this layer, the electron penetration is insufficient to alter the bulk magnetism.
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