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Updated: Jul 13, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Suppressed dependence of polarization on epitaxial strain in highly polar ferroelectrics
Ho Nyung Lee1, Serge M Nakhmanson, Matthew F Chisholm
1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. hnlee@ornl.gov
Abstract:
A combined experimental and computational investigation of coupling between polarization and epitaxial strain in highly polar ferroelectric PbZr(0.2)Ti(0.8)O3 (PZT) thin films is reported. A comparison of the properties of relaxed (tetragonality c/a approximately 1.05) and highly strained (c/a approximately 1.09) epitaxial films shows that polarization, while being amongst the highest reported for PZT or PbTiO3 in either film or bulk forms P(r) approximately 82 microC/cm(2)), is almost independent of the epitaxial strain. We attribute this behavior to a suppressed sensitivity of the A-site cations to epitaxial strain in these Pb-based perovskites, where the ferroelectric displacements are already large, contrary to the case of less polar perovskites, such as BaTiO3. In the latter case, the A-site cation (Ba) and equatorial oxygen displacements can lead to substantial polarization increases.
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