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Updated: Jul 13, 2026

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis
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Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis

Published on: March 29, 2016

Formation of hydrogen impurity States in silicon and insulators at low implantation energies

T Prokscha1, E Morenzoni, D G Eshchenko

  • 1Paul Scherrer Institut, Labor für Myon-Spin Spektroskopie, CH-5232 Villigen PSI, Switzerland. thomas.prokscha@psi.ch

Physical Review Letters
|August 7, 2007
PubMed

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