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Related Concept Videos

Significance of Displacement Current01:28

Significance of Displacement Current

A displacement current is analogous to a real current in Ampère's law, participating in Ampère's law the same way as the usual conduction current. However, it is produced by a changing electric field. Displacement current is defined in terms of a time-varying electric field, and also has an associated displacement current density. By adding a term accounting for displacement current, Maxwell modified the existing Ampère's law, which is now called generalized Ampère's law.
Displacement Current01:19

Displacement Current

Ampère's law, in its usual form, does not work in places where the current changes with time and is not steady. Thus, Maxwell suggested including an additional contribution, called the displacement current, Id, to the real conduction current I.
Ampere-Maxwell's Law: Problem-Solving01:17

Ampere-Maxwell's Law: Problem-Solving

A parallel-plate capacitor with capacitance C, whose plates have area A and separation distance d, is connected to a resistor R and a battery of voltage V. The current starts to flow at t = 0. What is the displacement current between the capacitor plates at time t? From the properties of the capacitor, what is the corresponding real current?
To solve the problem, we can use the equations from the analysis of an RC circuit and Maxwell's version of Ampère's law.
For the first part of the problem,...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.
Magnetic Field due to Moving Charges01:25

Magnetic Field due to Moving Charges

A stationary charge creates and interacts with the electric field, while a moving charge creates a magnetic field.
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...

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Picometer-Precision Atomic Position Tracking through Electron Microscopy
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Efficient current-induced domain-wall displacement in SrRuO3.

Michael Feigenson1, James W Reiner, Lior Klein

  • 1Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel.

Physical Review Letters
|August 7, 2007
PubMed
Summary

We show that electric current can move ferromagnetic domain walls in SrRuO3 films without a magnetic field. Reversing current direction also reverses domain wall motion, demonstrating efficient current-induced control.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Ferromagnetic domain walls are crucial for magnetic storage technologies.
  • Controlling domain wall motion with electric currents offers an alternative to magnetic fields.

Purpose of the Study:

  • To demonstrate current-induced domain wall displacement in SrRuO3 films.
  • To investigate the efficiency and controllability of this phenomenon.

Main Methods:

  • Fabrication of submicrometer SrRuO3 film patterns.
  • Monitoring domain wall displacement using the extraordinary Hall effect.
  • Applying controlled electric currents and measuring depinning fields.

Main Results:

  • Current-induced domain wall displacement was observed at zero applied magnetic field.
  • The direction of displacement was reversible with current reversal.
  • Current densities of 10^9-10^10 A/m^2 were sufficient for displacement.

Conclusions:

  • Electric current efficiently displaces ferromagnetic domain walls in SrRuO3.
  • The narrow domain wall width (approx. 3 nm) likely contributes to this high efficiency.
  • This finding has implications for developing advanced spintronic devices.