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Updated: Jul 13, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Molecular dynamics simulation of Ga penetration along grain boundaries in Al: a dislocation climb mechanism
Ho-Seok Nam1, David J Srolovitz
1Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544, USA. hnam@princeton.edu
Abstract:
Many systems where a liquid metal is in contact with a polycrystalline solid exhibit deep liquid grooves where the grain boundary meets the solid-liquid interface. For example, liquid Ga quickly penetrates deep into grain boundaries in Al, leading to intergranular fracture under very small stresses. We report on a series of molecular dynamics simulations of liquid Ga in contact with an Al bicrystal. We identify the mechanism for liquid metal embrittlement, develop a new model for it, and show that is in excellent agreement with both simulation and experimental data.

