Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer

We have studied the effect of temperature on the growth of InAs quantum dots (QDs) grown on a strained GaAs layer. The 2.0 nm thick, strained GaAs was obtained by growing it on a relaxed In0.15Ga0.85As layer. We observed that the density of QDs grown in this manner strongly depends on the growth temperature. A change in the growth temperature from 510 degrees C to 460 degrees C resulted in a large increase in the QD density from 2.3 x 10(10) cm(-2) to 6.7 x 10(10) cm(-2) and a sharp reduction in their height from 8.0 nm to 3.0 nm. Photoluminescence (PL) results from these QDs are also presented.