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Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes
Hisashi Masui1, Natalie N Fellows, Hitoshi Sato
1Materials Department, College of Engineering, University of California, Santa Barbara, California 93106-5050, USA. masui@engineering.ucsb.edu
Abstract:
A metal layer formed on the backside of InGaN/sapphire-based light-emitting diodes deteriorates the inherent optical power output. An experimental approach of a suspended die is employed to study the effects of such metal layers via a direct comparison in radiant flux from a discrete die with and without a reflector. A sphere package that employs no reflector is proposed and fabricated. Light extraction of the sphere design is discussed; a light source in the sphere package would not have to be either an ideal point or placed at the center of the sphere, due to a finite critical angle at the sphere/air interface.
