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Related Concept Videos

Electrical Power01:07

Electrical Power

Electric power is the product of current and voltage, represented in units of joules per second, or watts. For example, cars often have one or more auxiliary power outlets with which you can charge a cell phone or other electronic devices. These outlets may be rated at 20 amps and 12 volts, so that the circuit can deliver a maximum power of 240 watts. Consider a 25 Watt bulb and a 60 Watt bulb. The conversion of electrical energy produces heat and light, while the kinetic energy lost by the...
Conservation of AC Power01:15

Conservation of AC Power

The principle of power preservation is applicable to both ac and dc circuits. This principle, when applied to AC power, asserts that the complex, real, and reactive powers produced by the source are equal to the total complex, real, and reactive powers absorbed by the loads. When two load impedances are connected in parallel to an ac source V, the complex power provided by the source can be calculated using the relation
Electrical Transport01:29

Electrical Transport

The electrical transport property of a material is defined by its resistance and conductivity. Resistance is the measure of a material's ability to resist the flow of electric current, while conductivity gauges its ability to allow the current to pass through, depending on the geometry of the measurement cell, such as electrode spacing and area. Conductivity is measured in Siemens (S). There are different types of conductance, including specific conductance, equivalent conductance, and molar...
Power System Distribution01:25

Power System Distribution

Power system distribution involves delivering electrical energy from power plants to consumers through a network of transmission and distribution systems. The process begins at power plants, where energy from coal, gas, nuclear, water, and wind is converted into electrical energy. These plants use three-phase generators, typically rated between 50 to 1300 MVA, with terminal voltages ranging from a few kV to 20 kV, depending on the size and age of the units.
The transmission system is designed...
Transmission Line Design Considerations01:23

Transmission Line Design Considerations

Aluminum has become the material of choice for overhead transmission lines, surpassing copper due to its abundance and cost-effectiveness. The most prevalent type is the aluminum conductor, steel-reinforced (ACSR), which combines aluminum strands around a steel core. Other variants include all-aluminum conductors (AAC), all-aluminum alloy conductors (AAAC), aluminum conductor alloy-reinforced (ACAR), and aluminum-clad steel conductors. Advanced designs, such as aluminum conductors with steel...
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Reclosers and Fuses

Automatic circuit reclosers enhance the protection of distribution circuits by interrupting and auto-reclosing an AC circuit according to a preset sequence. They effectively manage temporary faults on overhead distribution lines, often caused by tree limbs or wildlife, by briefly disrupting service to improve overall reliability. However, contact with reclosers or energized broken conductors on the ground can pose serious hazards.
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Method for Recording Broadband High Resolution Emission Spectra of Laboratory Lightning Arcs
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Ferroelectric memories.

J F Scott, C A Paz de Araujo

    Science (New York, N.Y.)
    |December 15, 1989
    PubMed
    Summary
    This summary is machine-generated.

    New ferroelectric random-access memories (FeRAM) fabricated on silicon offer high speed, density, and nonvolatility. These advancements address previous issues, positioning FeRAM for widespread adoption in memory applications.

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    Area of Science:

    • Materials Science
    • Electrical Engineering
    • Solid State Physics

    Background:

    • Ferroelectric thin-film memories can now be integrated onto standard silicon integrated circuits.
    • This integration enables a combination of high speed, high density, and nonvolatility.
    • Previous limitations in ferroelectric memory technology have been a barrier to widespread adoption.

    Purpose of the Study:

    • To detail the capabilities of newly fabricated ferroelectric thin-film memories on silicon.
    • To explain the underlying switching kinetics and improvements in reliability.
    • To highlight the potential of these memories to replace existing memory technologies.

    Main Methods:

    • Fabrication of ferroelectric thin films (100-300 nm) onto standard silicon integrated circuits.
    • Characterization of memory performance, including speed, density, and power requirements.
    • Analysis of switching kinetics based on activation field dependence, applied field, and temperature.
    • Investigation and improvement of fatigue and retention failure mechanisms.

    Main Results:

    • Achieved 30-nanosecond read/erase/rewrite operation with standard 5-volt silicon logic levels.
    • Demonstrated very high memory density with a 2x2 micrometer cell size.
    • Confirmed complete nonvolatility, requiring no standby power.
    • Established a well-understood switching kinetics model and improved fatigue/retention characteristics to acceptable levels.
    • Exhibited extreme radiation hardness.

    Conclusions:

    • Ferroelectric random-access memories (FeRAM) fabricated on silicon represent a significant advancement in memory technology.
    • The demonstrated performance and reliability make FeRAM a strong candidate to replace magnetic core, magnetic bubble, and electrically erasable read-only memory.
    • Further understanding and improvement of switching kinetics and failure mechanisms have paved the way for practical applications.