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New methods of processing silicon slices.

T C Penn

    Science (New York, N.Y.)
    |May 23, 1980
    PubMed
    Summary
    This summary is machine-generated.

    Room-temperature radio-frequency plasma ionization enables submicrometer patterning of silicon integrated circuit materials. This technique offers significant improvements over traditional fabrication methods in material lithography.

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    Area of Science:

    • Materials Science
    • Plasma Physics
    • Semiconductor Manufacturing

    Background:

    • Integrated circuit fabrication relies on precise material patterning.
    • Traditional lithography techniques face limitations in achieving submicrometer dimensions.
    • Plasma processing offers advanced capabilities for material manipulation.

    Purpose of the Study:

    • To present a tutorial on plasma processing for material lithography.
    • To highlight improvements in patterning insulating, conducting, and semiconducting materials.
    • To review past fabrication techniques and advancements in plasma-based lithography.

    Main Methods:

    • Utilizing room-temperature, radio-frequency plasma ionization of gases.
    • Applying plasma processing for the patterning of various material types.

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  • Comparing plasma techniques with historical fabrication methods.

    • Main Results:

    • Achieved submicrometer patterning dimensions for silicon integrated circuit materials.
    • Demonstrated the effectiveness of plasma ionization in material lithography.
    • Identified key areas where plasma processing enhances fabrication.

    Conclusions:

    • Room-temperature plasma processing is a powerful technique for advanced lithography.
    • Plasma ionization offers superior control and precision in patterning semiconductor materials.
    • This method represents a significant advancement in integrated circuit fabrication.