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P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

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Stable Semiconductor Liquid Junction Cell with 9 Percent Solar-to-Electrical Conversion Efficiency.

K C Chang, A Heller, B Schwartz

Science (New York, N.Y.)

|June 3, 1977

Summary

This study demonstrates a 9% photovoltaic power conversion efficiency for a semiconductor liquid junction cell. The n-GaAs/0.8M K(2)Se-0.1M K(2)Se(2)-1M KOH/C system exhibits high stability and low photocorrosion under simulated sunlight.

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Area of Science:

Materials Science
Electrochemistry
Photovoltaics

Background:

Semiconductor liquid junction cells offer a promising avenue for solar energy conversion.
Gallium arsenide (GaAs) is a key semiconductor material for photovoltaic applications.
Electrolyte composition significantly impacts cell performance and stability.

Purpose of the Study:

To evaluate the photovoltaic power conversion efficiency of a specific n-GaAs based liquid junction cell.
To assess the stability and photocorrosion resistance of the cell under various solar intensities.
To optimize electrolyte formulation for enhanced solar cell performance.

Main Methods:

Fabrication of a semiconductor liquid junction cell using n-type gallium arsenide (n-GaAs).
Electrolyte preparation with a specific composition: 0.8M potassium selenide (K(2)Se), 0.1M potassium diselenide (K(2)Se(2)), and 1M potassium hydroxide (KOH).
Performance testing under simulated sunlight and accelerated aging tests using light sources at 3100 degrees K.

Main Results:

Achieved a photovoltaic power conversion efficiency of 9% under sunlight.
Observed very low photocorrosion currents during accelerated testing.
Demonstrated high output stability over the testing period.

Conclusions:

The n-GaAs/0.8M K(2)Se-0.1M K(2)Se(2)-1M KOH/C liquid junction cell is a stable and efficient photovoltaic device.
The chosen electrolyte composition contributes to minimizing photocorrosion and maintaining high performance.
This system shows potential for practical solar energy applications.