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Updated: Jul 12, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Abstract:
A new form of solid germanium, of greater density than ordinary cubic germanium, can be formed by compressing cubic germanium at pressures exceeding 120 kilobars and reducing the pressure back to that of the atmosphere. The crystal structure is tetragonal, with a equal to 5.93 angstroms and c, to 6.98; 12 atoms per unit cell; and theoretical density, 5.91 grams per cubic centimeter. Electrically it behaves like a semiconductor. At temperatures above 200 degrees C it reverts rather rapidly to the cubic form.
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