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Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Atomic Nuclei: Nuclear Spin State Population Distribution01:14

Atomic Nuclei: Nuclear Spin State Population Distribution

Near absolute zero temperatures, in the presence of a magnetic field, the majority of nuclei prefer the lower energy spin-up state to the higher energy spin-down state. As temperatures increase, the energy from thermal collisions distributes the spins more equally between the two states. The Boltzmann distribution equation gives the ratio of the number of spins predicted in the spin −½ (N−) and spin +½ (N+) states.
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Electrochemical Systems01:24

Electrochemical Systems

Electrochemical systems provide a fascinating insight into the dynamic interplay of charged species within various phases. One notable example is the interaction between a membrane permeable to K⁺ ions but not to Cl⁻ ions, separating an aqueous KCl solution from pure water. As K⁺ ions diffuse through the membrane, they generate net charges on each phase, leading to a potential difference between them.Similarly, when a piece of Zn is immersed in an aqueous ZnSO₄ solution, the Zn metal, composed...
Electric Field of Two Equal and Opposite Charges01:30

Electric Field of Two Equal and Opposite Charges

Atoms generally contain the same number of positively and negatively charged particles, protons, and electrons. Hence, they are electrically neutral. However, the centers of the positive and negative charges do not always coincide. In such a scenario, the electric field of an atom may not be zero.
A separation of the positive and negative charges can lead to a weak, remnant effect of the positive and negative charges. The expectation is that the more the distance between the positive and...
Atomic Radii and Effective Nuclear Charge03:08

Atomic Radii and Effective Nuclear Charge

The elements in groups of the periodic table exhibit similar chemical behavior. This similarity occurs because the members of a group have the same number and distribution of electrons in their valence shells.

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Related Experiment Video

Updated: Jul 12, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Negative differential resistance on the atomic scale: implications for atomic scale devices.

I W Lyo, P Avouris

    Science (New York, N.Y.)
    |September 22, 1989
    PubMed
    Summary

    Negative differential resistance (NDR) enables fast electronic device switching. Researchers observed NDR on a boron-exposed silicon surface at the atomic scale, resulting from tunneling through localized states.

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    In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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    In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

    Published on: June 26, 2015

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    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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    In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
    09:26

    In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

    Published on: June 26, 2015

    Area of Science:

    • Materials Science
    • Surface Science
    • Condensed Matter Physics

    Background:

    • Negative differential resistance (NDR) is crucial for high-speed electronic devices.
    • Understanding NDR at the nanoscale is key to advancing semiconductor technology.

    Purpose of the Study:

    • To investigate the origin of NDR at the atomic level on a boron-exposed silicon(111) surface.
    • To demonstrate the feasibility of achieving device characteristics at the atomic scale.

    Main Methods:

    • Utilized scanning tunneling microscopy (STM) for atomic-scale imaging.
    • Employed scanning tunneling spectroscopy (STS) to analyze current-voltage characteristics.

    Main Results:

    • Observed NDR in a diode configuration using an STM tip over specific sites on a boron-exposed silicon(111) surface.
    • Identified NDR-active sites to be of atomic dimensions (approximately 1 nanometer).
    • Attributed NDR to quantum tunneling through localized, atomic-like states.

    Conclusions:

    • NDR can be achieved on the atomic scale on specific semiconductor surfaces.
    • Localized electronic states are responsible for NDR phenomena at this scale.
    • Atomic-scale NDR opens possibilities for novel nanoscale electronic devices.