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Related Experiment Videos

Normal metallic point contacts.

A G Jansen, F M Mueller, P Wyder

    Science (New York, N.Y.)
    |March 10, 1978
    PubMed
    Summary
    This summary is machine-generated.

    The voltage derivative of nonlinear resistance in point contacts reveals phonon properties and impurity effects. This study separates these contributions, linking phonon structure to bulk densities and background to impurity concentration.

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    Area of Science:

    • Solid State Physics
    • Materials Science
    • Nanophysics

    Background:

    • Nonlinear resistance in point contacts is complex.
    • Understanding contributions to voltage derivatives is crucial for material characterization.

    Purpose of the Study:

    • To separate the phonon-emission effect from the background effect in the voltage derivative of nonlinear resistance.
    • To correlate the separated effects with material properties.

    Main Methods:

    • Measurement of the voltage derivative of nonlinear resistance in tiny point contacts.
    • Decomposition of the measured signal into phonon-emission (alpha(2)F) and background components.

    Main Results:

    • The alpha(2)F component exhibits structure aligned with bulk phonon densities of states.

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  • The integral of 2 alpha(2)F/omega correlates with existing literature values.
  • The background effect is found to be related to the impurity concentration of the materials.

    • Conclusions:

    • The voltage derivative method effectively distinguishes phonon properties from impurity effects in point contacts.
    • This technique provides insights into both electronic-phonon coupling and material purity.