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Importance of the Debye screening length on nanowire field effect transistor sensors
Eric Stern1, Robin Wagner, Fred J Sigworth
1Department of Biomedical Engineering, Yale University, PO Box 208284, New Haven, Connecticut 06520, USA.
Abstract:
Nanowire field effect transistors (NW-FETs) can serve as ultrasensitive detectors for label-free reagents. The NW-FET sensing mechanism assumes a controlled modification in the local channel electric field created by the binding of charged molecules to the nanowire surface. Careful control of the solution Debye length is critical for unambiguous selective detection of macromolecules. Here we show the appropriate conditions under which the selective binding of macromolecules is accurately sensed with NW-FET sensors.

