Related Experiment Video
Updated: Jul 11, 2026
High-Contrast and Fast Photorheological Switching of a Twist-Bend Nematic Liquid Crystal
Published on: October 31, 2019
Microscopic investigation of the memory effect found in micropatterned nematic liquid crystal cells
Thet Naing Oo1, Yuuki Yasu, Munehiro Kimura
1Department of Electrical Engineering, Faculty of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan. tno2002@stn.nagaokaut.ac.jp
Abstract:
Isotropic untreated indium-tin-oxide layers can cause memory alignment of nematic liquid crystals. We have demonstrated an experimental method to characterize this effect by using a micropatterned surface. We tried to imprint a high tilt on an indium-tin-oxide substrate surface. We also investigated microscopic switching behavior of a memory-induced nematic liquid crystal cell by means of a vertical field effect.
