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Updated: Jul 11, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Linear scaling calculation of an n-type GaAs quantum dot
Shintaro Nomura1, Toshiaki Iitaka
1Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Japan. snomura@sakura.cc.tsukuba.ac.jp
Abstract:
A linear scale method for calculating electronic properties of large and complex systems is introduced within a local density approximation. The method is based on the Chebyshev polynomial expansion and the time-dependent method, which is tested on the calculation of the electronic structure of a model n-type GaAs quantum dot.
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