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Labyrinthine island growth during Pd/Ru(0001) heteroepitaxy
N Rougemaille1, F El Gabaly, R Stumpf
1Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Physical Review Letters
|October 13, 2007
Summary
Palladium (Pd) on Ruthenium (Ru) exhibits unique epitaxial growth, forming snakelike islands and labyrinthine patterns due to surface alloy formation that alters atomic step attachment.
Area of Science:
- Surface Science
- Materials Science
- Nanotechnology
Background:
- Understanding thin film growth mechanisms is crucial for designing novel materials.
- Epitaxial growth of metal nanoparticles on metal substrates presents unique challenges and opportunities.
- Atomic step edges play a critical role in controlling surface morphology and growth dynamics.
Purpose of the Study:
- To investigate the novel epitaxial growth mode of Palladium (Pd) deposited on Ruthenium (Ru).
- To elucidate the underlying mechanisms responsible for the observed snakelike island advancement and labyrinthine patterns.
- To explore the role of surface alloy formation in modulating growth kinetics.
Main Methods:
- Low Energy Electron Microscopy (LEEM) for in-situ observation of growth dynamics.
- Scanning Tunneling Microscopy (STM) for atomic-scale surface characterization.
- Density Functional Theory (DFT) calculations to model surface interactions and energetics.
Main Results:
- Pd deposition on Ru leads to attachment primarily at specific sections of atomic step edges.
- A novel snakelike island advancement mechanism was observed, resulting in labyrinthine surface patterns.
- Formation of a surface alloy around growing Pd islands was identified as the key factor.
- The surface alloy progressively reduces step attachment rates, inducing growth instabilities.
Conclusions:
- The observed growth mode is driven by the formation of a Pd-Ru surface alloy.
- This surface alloy mechanism leads to preferential adatom attachment at fast-advancing step sections.
- The findings provide fundamental insights into controlling nanoscale epitaxial growth for advanced material applications.

