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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Controlled self-organization of atom vacancies in monatomic gallium layers

P C Snijders1, E J Moon, C González

  • 1Kavli Institute of NanoScience Delft, Delft University of Technology, 2628 CJ Delft, The Netherlands. snijderspc@ornl.gov

Physical Review Letters
|October 13, 2007
PubMed

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