Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Block Diagram Reduction01:22

Block Diagram Reduction

The process of deriving the transfer function of a control system often involves reducing its block diagram to a single block. This simplification can be achieved through a series of strategic operations, including relocating branch points and comparators. These operations preserve the overall function of the system while allowing for easier manipulation and combination of blocks.
The first step in this process is the identification and relocation of a branch point. A branch point, where a...
Elements of Block Diagrams01:25

Elements of Block Diagrams

Block diagrams serve as a visual representation of the input-output relationships within a system. An illustrative example is a heating system, where the set temperature activates the furnace to warm the room to the desired level. Block diagrams are versatile, modeling linear systems through Laplace transform variables and nonlinear systems using time domain variables.
A block diagram typically includes essential elements such as comparators, blocks, and feedback loops. Each of these elements...
Introduction to Structures01:30

Introduction to Structures

A structure is defined as a system of interconnected members designed to support or transfer forces and successfully withstand the loads acting on them. The internal forces of a structure can be determined by decomposing the structure and analyzing the free-body diagrams of the individual members or of a combination of members. This helps in understanding the structural elements' behavior and ensuring that the structure is stable and can withstand the subjected loads.
There are three main...
Signal Flow Graphs01:18

Signal Flow Graphs

Signal-flow graphs offer a streamlined and intuitive approach to representing control systems, providing an alternative to traditional block diagrams. These graphs use branches to symbolize systems and nodes to represent signals, effectively illustrating the relationships and interactions within the system.
In a signal-flow graph, branches denote the system's transfer functions, while nodes represent the signals. The direction of signal flow is indicated by arrows, with the corresponding...
Transfer function and Bode Plots-I01:19

Transfer function and Bode Plots-I

A transfer function presented in its standard form integrates elements' constant gain, the zeros, and poles at the origin, simple zeros and poles, and quadratic poles and zeros. The transfer function can be written as H(ω):

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Probing Exotic Cross-Shell Interactions at N=28 with Single-Neutron Transfer on ^{47}K.

Physical review letters·2025
Same author

Discovery and Characterization of Antiferromagnetic UFe<sub>5</sub>As<sub>3</sub>.

Inorganic chemistry·2024
Same author

High-Precision Spectroscopy of ^{20}O Benchmarking Ab Initio Calculations in Light Nuclei.

Physical review letters·2024
Same author

Evidence of Partial Seniority Conservation in the πg_{9/2} Shell for the N=50 Isotones.

Physical review letters·2022
Same author

Two-color synchrotron X-ray spectroscopy based on transverse resonance island buckets.

Scientific reports·2022
Same author

Exchange scaling of ultrafast angular momentum transfer in 4f antiferromagnets.

Nature materials·2022

Related Experiment Video

Updated: Jul 11, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

Walking the path from B4- to B1-type structures in GaN.

S E Boulfelfel1, D Zahn, Yu Grin

  • 1Max-Planck-Institut für Chemische Physik fester Stoffe, 01187 Dresden, Germany.

Physical Review Letters
|October 13, 2007
PubMed
Summary

Molecular dynamics simulations reveal a nucleation and growth mechanism for the Gallium Nitride (GaN) pressure-induced phase transition. Defect incorporation, particularly aluminum substitution, significantly alters this transformation pathway.

Related Experiment Videos

Last Updated: Jul 11, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

Area of Science:

  • Materials Science
  • Computational Materials Science
  • Solid-State Physics

Background:

  • Gallium Nitride (GaN) exhibits a pressure-induced phase transition from its wurtzite (B4) to rocksalt (B1) structure.
  • Understanding this transition is crucial for applications involving high pressure or modified GaN materials.

Purpose of the Study:

  • To elucidate the atomic-level mechanism of the B4 to B1 phase transition in GaN under pressure.
  • To investigate the influence of intrinsic defects and alloying on the phase transition pathway.

Main Methods:

  • Atomistic simulations using molecular dynamics (MD).
  • Analysis of nucleation and growth processes during the phase transformation.
  • Comparison with static calculation predictions.

Main Results:

  • A nucleation and growth mechanism involving a tetragonal metastable intermediate was identified for GaN.
  • An h-MgO type intermediate structure was ruled out by MD simulations.
  • Defect incorporation, including vacancies, In substitution, and Al substitution, significantly modifies the transition pathway, with 5% Al substitution bypassing the tetragonal intermediate.

Conclusions:

  • The phase transition in GaN proceeds via a tetragonal metastable state, contrary to some static predictions.
  • Defect engineering, especially Al substitution, offers a route to control the phase transition mechanism and stabilize high-pressure phases.