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Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

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Chaotic dynamics of semiconductor microring lasers.

Konstantinos E Chlouverakis¹, Spiros Mikroulis, Ioanna Stamataki

¹Department of Informatics and Telecommunications, University of Athens, Ilisia, Athens, 15784, Greece. chlouver@di.uoa.gr

|October 17, 2007

Summary

This study analyzes chaotic attractors in InGaAsP-InP microring lasers. High-dimensional chaos and phase-dependent behavior were observed due to mutual mode injection and waveguide reflectivity.

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Area of Science:

Photonics and Laser Physics
Nonlinear Dynamics

Background:

Semiconductor lasers, particularly those based on Indium Gallium Arsenide Phosphide (InGaAsP) and Indium Phosphide (InP), are crucial for optical communications.
Understanding and controlling chaotic dynamics in lasers is essential for advanced applications and preventing signal degradation.

Purpose of the Study:

To calculate and evaluate the complexity and dynamics of chaotic attractors in an InGaAsP-InP microring laser.
To investigate the origins of chaos in this laser system.
To analyze the characteristics of the chaotic output.

Main Methods:

Utilized a multimode rate equation model to simulate laser dynamics.
Calculated and evaluated chaotic attractors.
Performed data analysis on the filtered output power.

Main Results:

Chaos originates from continuous mutual mode injection, exacerbated by the bus waveguide's residual reflectivity at high injection currents.
Data analysis revealed the presence of high-dimensional chaos.
Demonstrated phase-dependent behavior in the laser output.

Conclusions:

The InGaAsP-InP microring laser exhibits complex chaotic dynamics.
Mutual mode injection and waveguide reflectivity are key factors driving this chaos.
The observed high-dimensional chaos and phase dependence offer insights into nonlinear laser behavior.